Laplace deep level transient spectroscopy of electron traps in epitaxial metalorganic chemical vapor deposition grown n-GaSb

Murape, Davison Munyaradzi (2013) Laplace deep level transient spectroscopy of electron traps in epitaxial metalorganic chemical vapor deposition grown n-GaSb.

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Official URL: http://ir.nust.ac.zw/xmlui/handle/123456789/619

Abstract

Published Journal Article,Three prominent electron traps, 0.167 eV, 0.243 eV, and 0.295 eV below the conduction band minimum were detected in Te doped MOCVD grown n-GaSb using an Au Schottky barrier diode. The free carrier concentration of the 3 lm epilayer grown on nþ (>1018 cm 3) substrate, confirmed by Hall and capacitance-voltage measurements, was 5–7 1016 cm 3. The low doping concentration of the epitaxial layers was achieved using diethyl tellurium as the dopant source. Defect concentration profiles suggest that Ec-0.167 eV and Ec-0.243 are predominantly confined to the surface of the epilayer and that the concentration, thereof, approximates the free carrier concentration of the material close to the metal-semiconductor interface.

Item Type: Article
Uncontrolled Keywords: spectroscopy, transient spectroscopy, electrons, field dependence
Divisions: Universities > State Universities > National University of Science and Technology
Depositing User: Mr. Edmore Sibanda
Date Deposited: 15 May 2017 22:30
Last Modified: 15 May 2017 22:30
URI: http://researchdatabase.ac.zw/id/eprint/4589

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